发明名称 Production of a through-contact used in the production of integrated circuits comprises forming an insulating layer, forming a contact opening in a contact region, and filling the contact opening with a conducting material
摘要 Production of a through-contact (34) comprises forming an insulating layer (56), forming a contact opening (76) in a contact region extending from the second main side (59) of the insulating layer up to a first strip conductor (18) and opening into a trench, and filling the contact opening with a conducting material (78) to produce the through-contact and a second strip conductor (10) so that the width of the second strip conductor can be fitted in a self-adjusting manner to the size of the through-contact. An Independent claim is also included for the through-contact formed by the above process. Preferred Features: The step of filling the contact opening comprises also filling the trench for the second strip conductor with the conducting material to produce the second strip conductor. The insulating layer is produced by forming a further insulating layer, forming a trench for the first strip conductor in a main side of the further insulating layer, filling the trench with a conducting material to form the first strip conductor, applying the insulating layer on the main side of the further insulating layer, and forming the trench for the second strip conductor in the main side of the insulating layer lying opposite the further insulating layer.
申请公布号 DE10201448(A1) 申请公布日期 2003.07.24
申请号 DE2002101448 申请日期 2002.01.16
申请人 INFINEON TECHNOLOGIES AG 发明人 KLEIN, WOLFGANG;SCHWERD, MARKUS;KOLLER, KLAUS
分类号 H01L21/768;H01L23/522;(IPC1-7):H01L21/283 主分类号 H01L21/768
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