MATERIAL FOR RAISING SINGLE CRYSTAL SIC AND METHOD OF PREPARING SINGLE CRYSTAL SIC

摘要

According to the invention, a complex (M or M') formed by stacking in a closely contacted state a single crystal alpha -SiC base material (1) and a polycrystalline plate (2) which is produced into a plate-like shape by the CVD method with interposing an intermediate layer (4 or 4') containing Si and O as fundamental components, such as silicon rubber between opposing faces of the two members (1) and (2) in a laminated manner is heat-treated at a temperature of 2,200 DEG C or higher, and under a saturated SiC vapor pressure, thereby causing polycrystal members of the polycrystalline plate (3) to be transformed in a same direction as single crystal of the single crystal alpha -SiC base material (1) to integrally grow single crystal. Therefore, single crystal SiC of a high quality in which crystal defects and distortion are prevented from occurring and micropipe defects hardly occur can be produced easily and efficiently.