发明名称 Semiconductor device and method of manufacturing semiconductor device
摘要 The semiconductor device of the present invention in which an electrical connection is established between front and back surfaces of a substrate (1) by means of at least one through hole (2) formed through the substrate between the front and back surfaces is characterized in that an electrical connection portion (10) is formed by a semiconductor process on at least one surface of the front and back surfaces of the substrate in a vicinity of an end opening of the through hole; an insulating layer (4) formed of an organic material is formed on an inside surface of the through hole; an electroconductive layer (5) is formed on an inside surface of the insulating layer; and the electrical connection portion is electrically connected to the electroconductive layer to be electrically connected to a side of the other surface of the substrate. <IMAGE>
申请公布号 EP1329949(A2) 申请公布日期 2003.07.23
申请号 EP20030001196 申请日期 2003.01.21
申请人 CANON KABUSHIKI KAISHA 发明人 MUTA, TADAYOSHI;TACHIKAWA, JIN;SAITO, RIICHI;SUTO, TADANORI;TAKAYAMA, MANABU;MORIMOTO, HIROYUKI
分类号 H01L23/52;H01L21/3205;H01L21/768;H01L23/48;(IPC1-7):H01L21/768 主分类号 H01L23/52
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