发明名称 MAGNETIC FIELD GENERATOR FOR MAGNETRON PLASMA, AND PLASMA ETCHING APPARATUS AND METHOD COMPRISING THE MAGNETIC FIELD GENERATOR
摘要 In a magnetic field generator for magnetron plasma generation which comprises a dipole-ring magnet with a plurality of columnar anisotropic segment magnets arranged in a ring-like manner, or in an etching apparatus and a method both of which utilize the magnetic field generator, the uniformity of plasma treatment over the entire surface of a wafer (workpiece) is improved by controlling the direction of the magnetic field relative to the working surface of the wafer (workpiece) which is subject to plasma treatment such as etching. <IMAGE>
申请公布号 EP1329947(A1) 申请公布日期 2003.07.23
申请号 EP20010958549 申请日期 2001.08.28
申请人 SHIN-ETSU CHEMICAL COMPANY, LTD.;TOKYO ELECTRON LIMITED 发明人 MIYATA, KOJI;HIROSE, JUN;KODASHIMA, AKIRA;TOZAWA, SHIGEKI;KUBOTA, KAZUHIRO;CHIBA, YUKI
分类号 H01J37/34;(IPC1-7):H01L21/306;H05H1/46 主分类号 H01J37/34
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