发明名称 |
MAGNETIC FIELD GENERATOR FOR MAGNETRON PLASMA, AND PLASMA ETCHING APPARATUS AND METHOD COMPRISING THE MAGNETIC FIELD GENERATOR |
摘要 |
In a magnetic field generator for magnetron plasma generation which comprises a dipole-ring magnet with a plurality of columnar anisotropic segment magnets arranged in a ring-like manner, or in an etching apparatus and a method both of which utilize the magnetic field generator, the uniformity of plasma treatment over the entire surface of a wafer (workpiece) is improved by controlling the direction of the magnetic field relative to the working surface of the wafer (workpiece) which is subject to plasma treatment such as etching. <IMAGE> |
申请公布号 |
EP1329947(A1) |
申请公布日期 |
2003.07.23 |
申请号 |
EP20010958549 |
申请日期 |
2001.08.28 |
申请人 |
SHIN-ETSU CHEMICAL COMPANY, LTD.;TOKYO ELECTRON LIMITED |
发明人 |
MIYATA, KOJI;HIROSE, JUN;KODASHIMA, AKIRA;TOZAWA, SHIGEKI;KUBOTA, KAZUHIRO;CHIBA, YUKI |
分类号 |
H01J37/34;(IPC1-7):H01L21/306;H05H1/46 |
主分类号 |
H01J37/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|