| 发明名称 |
Coulomb-blockade element and method of manufacturing the same |
| 摘要 |
<p>A Coulomb-blockade element includes a silicon layer (4) formed on a substrate (2) through an insulating film (3). The silicon layer includes a plurality of narrow wire portions (30-32) and a connecting portion (33). The narrow wire portion serves as a conductive island for confining a charge. The connecting portion is formed as a branching or bending point for coupling the narrow wire portions and has constrictions on at least one of the upper and lower surfaces thereof, which make a portion near the narrow wire portion thinner than the narrow wire portion. <IMAGE></p> |
| 申请公布号 |
EP1028472(B1) |
申请公布日期 |
2003.07.23 |
| 申请号 |
EP20000250045 |
申请日期 |
1995.10.24 |
| 申请人 |
NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
发明人 |
TAKAHASHI, YASUO;NAGASE, MASAO;FUJIWARA, AKIRA |
| 分类号 |
H01L21/335;H01L29/76;(IPC1-7):H01L29/76;H01L21/334 |
主分类号 |
H01L21/335 |
| 代理机构 |
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