Chemical mechanical planarization or polishing pad with sections having varied groove patterns

摘要

The present invention relates to a polishing pad (310) for use in chemical mechanical planarization applications. More particularly, the present invention relates to a pad used in the chemical mechanical planarization or polishing of semiconductor wafers. A rotary polishing pad for chemical mechanical planarization of a semiconductor wafer, the rotary polishing pad comprising at least two polishing pad sections serially linked along a rotational path of the rotary polishing pad (310), the polishing pad sections (312) comprising a first polishing pad section having a first groove pattern (316b) formed in an outer surface of the polishing pad, wherein the first groove pattern (316b) comprises a plurality of grooves and a second polishing pad section having a second groove pattern (316a) formed in the outer surface of the polishing pad section wherein the second groove pattern comprises a second plurality of grooves and the first groove pattern differs from the second groove pattern.