发明名称 |
HIGH SPEED SILICON ETCHING METHOD |
摘要 |
This invention provides the following high-rate silicon etching method. An object to be processed W having a silicon region is so set as to be in contact with a process space in a process chamber that can be held in vacuum. An etching gas is introduced into the process space to form a gas atmosphere at a gas pressure of 13 Pa to 1,333 Pa (100 mTorr to 10 Torr). A plasma is generated upon application of RF power. In the plasma, the sum of the number of charged particles such as ions and the number of radicals increases, and etching of the silicon region is performed at a higher rate than in conventional etching. <IMAGE>
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申请公布号 |
EP1329948(A1) |
申请公布日期 |
2003.07.23 |
申请号 |
EP20010967676 |
申请日期 |
2001.09.13 |
申请人 |
TOKYO ELECTRON LIMITED;KABUSHIKI KAISHA TOSHIBA |
发明人 |
MIMURA, TAKANORI;NAGASEKI, KAZUYA;SAKAI, ITSUKO;OHIWA, TOKUHISA |
分类号 |
H01L21/302;H01L21/3065;H01J37/32;H01L21/308;H01L21/3213;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/302 |
代理机构 |
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主权项 |
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地址 |
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