发明名称 |
Heterojunction biopolar transistor and semiconductor integrated circuit device using the same |
摘要 |
A heterojunction bipolar transistor has a raised breakdown voltage and restrains the rising characteristic of IC-VCE characteristic from degrading. The collector region includes first, second, and third collector layers of semiconductor. The first collector layer is made of a doped or undoped semiconductor in such a way as to contact the sub-collector region. The second collector layer is made of a doped or undoped semiconductor having a narrower band gap than the first collector layer in such a way as to contact the base region. The third collector layer has a higher doping concentration than the second collector layer in such a way as to be located between or sandwiched by the first collector layer and the second collector layer. <IMAGE> |
申请公布号 |
EP1329959(A1) |
申请公布日期 |
2003.07.23 |
申请号 |
EP20020018499 |
申请日期 |
2002.08.16 |
申请人 |
NEC COMPOUND SEMICONDUCTOR DEVICES, LTD. |
发明人 |
NIWA, TAKAKI;SHIMAWAKI, HIDENORI;AZUMA, KOJI;KUROSAWA, NAOTO |
分类号 |
H01L21/331;H01L29/08;H01L29/737 |
主分类号 |
H01L21/331 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|