| 摘要 |
PURPOSE: A method for fabricating a pad oxide layer of a semiconductor device is provided to increase uniformity in a silicon wafer and gettering efficiency by using rapid thermal annealing(RTA) equipment instead of a furnace-type heat treatment method. CONSTITUTION: After the pad oxide layer is formed on the entire surface of a silicon wafer by using the RTA equipment, a pad nitride layer is formed on the resultant structure. A photoresist layer is applied to the entire surface of the pad nitride layer. After an exposure and development process is performed to form a photoresist layer pattern, the pad nitride layer and the pad oxide layer are etched to form an active region and an isolation region by using the photoresist layer pattern as an etch mask.
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