发明名称 Electrode pad in semiconductor device and method of producing the same
摘要 An electrode pad PAD, which is a layer 11 substantially made of aluminum to be connected to an internal conductive region, is formed on an interlayer insulation film 10 made of an SiO2 layer or the like so as to be exposed in an opening portion of a passivation film 12 as the uppermost layer. For example, a bonding wire not shown in the drawing is connected to the electrode pad PAD. The exposed surface of the electrode pad PAD comprises a rough surface R roughened by means of an etching solution. Thereby, the surface of the electrode pad PAD has a substantially constant roughness, which increases the contact area for the bonding wire not shown in the drawing.
申请公布号 US6596628(B2) 申请公布日期 2003.07.22
申请号 US20020117688 申请日期 2002.04.05
申请人 SEIKO EPSON CORPORATION 发明人 MAGARA SHINJI
分类号 C23F1/36;H01L21/306;H01L21/308;H01L21/4763;H01L23/485;(IPC1-7):H01L21/476 主分类号 C23F1/36
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