发明名称 |
Laser annealing method |
摘要 |
In crystallizing an amorphous silicon film by illuminating it with linear pulse laser beams having a normal-distribution type beam profile or a similar beam profile, the linear pulse laser beams are applied in an overlapped manner. There can be obtained effects similar to those as obtained by a method in which the laser illumination power is gradually increased and then decreased in a step-like manner in plural scans. |
申请公布号 |
US6596613(B1) |
申请公布日期 |
2003.07.22 |
申请号 |
US19960594670 |
申请日期 |
1996.02.02 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KUSUMOTO NAOTO;TANAKA KOICHIRO |
分类号 |
H01L21/268;B23K26/06;H01L21/20;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/268 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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