发明名称 Mask for the selective growth of a solid, a manufacturing method for the mask, and a method for selectively growing a solid using the mask
摘要 A mask for a selective growth of a solid, is provided in which the solid is selectively grown in a predetermined region of a substrate and growth on other regions is suppressed. A method is also provided for selectively growing a solid on only the predetermined region of a substrate using the mask. In the mask, a surface layer and an underlayer are provided, each having different chemical compositions. Thus, even if the mask is formed on a substrate in an ultra thin film, the generation of mask defects can be suppressed and stability provided to heat and electron beams.
申请公布号 US6596186(B2) 申请公布日期 2003.07.22
申请号 US20010917711 申请日期 2001.07.31
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YASUDA TETSUJI;IKUTA KAZUYUKI;YAMASAKI SATOSHI;TANAKA KAZUNOBU;HWANG DOO-SUP
分类号 H01L21/31;C23C16/04;G03F1/00;H01L21/20;H01L21/205;H01L31/18;(IPC1-7):B44C1/22;H01L21/00 主分类号 H01L21/31
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