发明名称 |
Mask for the selective growth of a solid, a manufacturing method for the mask, and a method for selectively growing a solid using the mask |
摘要 |
A mask for a selective growth of a solid, is provided in which the solid is selectively grown in a predetermined region of a substrate and growth on other regions is suppressed. A method is also provided for selectively growing a solid on only the predetermined region of a substrate using the mask. In the mask, a surface layer and an underlayer are provided, each having different chemical compositions. Thus, even if the mask is formed on a substrate in an ultra thin film, the generation of mask defects can be suppressed and stability provided to heat and electron beams.
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申请公布号 |
US6596186(B2) |
申请公布日期 |
2003.07.22 |
申请号 |
US20010917711 |
申请日期 |
2001.07.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YASUDA TETSUJI;IKUTA KAZUYUKI;YAMASAKI SATOSHI;TANAKA KAZUNOBU;HWANG DOO-SUP |
分类号 |
H01L21/31;C23C16/04;G03F1/00;H01L21/20;H01L21/205;H01L31/18;(IPC1-7):B44C1/22;H01L21/00 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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