发明名称 |
Chemically preventing Cu dendrite formation and growth by immersion |
摘要 |
The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP by immersing the wafer in a bath containing a chemical agent. Embodiments include removing up to 60 Å of silicon oxide by immersing the wafer in an acidic solution, such as a solution of hydrofluoric acid and water.
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申请公布号 |
US6596637(B1) |
申请公布日期 |
2003.07.22 |
申请号 |
US19980206170 |
申请日期 |
1998.12.07 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
SCHONAUER DIANA M.;AVANZINO STEVEN C.;YANG KAI |
分类号 |
H01L21/311;H01L21/321;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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