发明名称 |
Manufacturing use of photomasks with an opaque pattern comprising an organic layer photoabsorptive to exposure light with wavelengths exceeding 200 NM |
摘要 |
A method is provided for well printing a specified pattern even when the exposure treatment using a resist mask uses exposure light with a wavelength over 200 nm. When exposure treatment is applied to a semiconductor wafer by using exposure light with a wavelength over 200 nm, a photomask is used. The photomask is provided with an opaque pattern of a resist layer on an organic layer which is photoabsorptive in reaction to exposure light.
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申请公布号 |
US6596656(B2) |
申请公布日期 |
2003.07.22 |
申请号 |
US20010931938 |
申请日期 |
2001.08.20 |
申请人 |
HITACHI, LTD. |
发明人 |
TANAKA TOSHIHIKO;HASEGAWA NORIO;MORI KAZUTAKA;MIYAZAKI KO;TERASAWA TSUNEO |
分类号 |
G03F1/08;G03F1/10;G03F1/54;G03F1/56;G03F7/00;G03F7/20;G03F7/22;H01L21/027;H01L21/3205;H01L21/768;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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