Method of fabricating low dielectric constant film

摘要

A method of forming a low dielectric constant film. The low dielectric constant film is formed by passing gaseous silane into a reaction chamber and performing a plasma chemical vapor deposition to form a carbon-rich layer. Micro-particles deposited on the dielectric film are purged by ammonia. By adjusting the flow rate of ammonia, and the pressure and plasma density inside the reaction chamber, several ammonium plasma conditions are produced in sequence to clear the particles on the dielectric film.