发明名称 Semiconductor device and method of manufacturing the same
摘要 A semiconductor device includes a passivation film (19) having opening portions through which an electrode pads (18) formed on a semiconductor chip (21) are exposed, projecting electrode portions (20) whose one end faces are connected to the electrode pads (18) through the opening portions, post electrode portions (16A) through which the other end faces of the projecting electrode portions (20) and the metal bumps (26) are connected to each other, and an insulating resin layer (13) having elasticity which covers the post electrode portions (16A), the projecting electrode portions (20) and the passivation film (19) with the exception of the end faces of the post electrode portions (16A).
申请公布号 US6597070(B2) 申请公布日期 2003.07.22
申请号 US20010770458 申请日期 2001.01.29
申请人 NEC ELECTRONICS CORPORATION 发明人 MIYAZAKI TAKASHI
分类号 H01L23/12;H01L21/56;H01L21/60;H01L21/68;H01L23/29;H01L23/31;H01L23/373;H01L23/485;H01L23/52;(IPC1-7):G01L23/48 主分类号 H01L23/12
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