THIN FILM TRANSISTOR AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A thin film transistor(TFT) is provided to improve an operating current by reducing amorphous silicon bulk resistance that decreases the operating current in a TFT structure. CONSTITUTION: A glass substrate(20) is prepared. A gate electrode(21) is formed on a particular region of the substrate. A gate insulation layer(22) is formed on the substrate including the gate electrode. An active layer(23) is formed on a particular region of the gate insulation layer. A data electrode(25) is formed on a predetermined region of the gate insulation layer including the active layer. A passivation layer(26) is formed on the front surface of the gate insulation layer including the data electrode, having a contact hole(27) exposing a part of the data electrode. A pixel electrode(28) is formed on the passivation layer, connected to the data electrode through the contact hole. An ohmic layer(24) is formed on an interface between the data electrode and the active layer and between the data electrode and the gate insulation layer. A channel region(29) is formed in a lower portion inside the active layer when a TFT transistor operates. The channel region comes in direct contact with the ohmic layer.