Magnetoresistive device with an alpha-Fe2O3 antiferromagnetic film and indirect exchange coupling film layers of differing thickness

摘要

A magnetoresistance effect device of the present invention includes a multilayer film. The multilayer film includes an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film and a second ferromagnetic film, which are provided in this order on a non-magnetic substrate directly or via an underlying layer. The antiferromagnetic film comprises an alpha-Fe2O3 film. A surface roughness of the multilayer film is about 0.5 nm or less.