发明名称 |
Robust reference sensing cell for flash memory |
摘要 |
A robust reference sensing cell for FLASH memory is formed. The cell utilizes floating gate transistors with a drain transition region concentration gradient that is less than the drain transition region concentration gradient of the floating gate transistors used to form the FLASH memory cell array.
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申请公布号 |
US6597035(B1) |
申请公布日期 |
2003.07.22 |
申请号 |
US20000615134 |
申请日期 |
2000.07.13 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HARRIS GEORGE E. |
分类号 |
H01L27/115;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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