Light emitting diode and a method for manufacturing the same

摘要

An LED is provided with a p-type semiconductor region in the shape of an island being buried in an n-type semiconductor region from the surface of it, and forms a pn junction at the interface between these n-type region and p-type region. The pn junction has a bottom junction at the bottom of the n-type region and a side junction at the peripheral side face. The bottom junction comprises a first subjunction being deep and constant in junction depth and a second subjunction varying continuously in junction depth. The depth of the second subjunction is shallower than the depth of the first subjunction. The p-type region portion above the second subjunction is thinner in thickness than the p-type region portion above the first subjunction. A light passing through the p-type region portion of the former is less in absorption and more in optical power of the output light. The total power of the output light of the whole LED is increased correspondingly to reduction in thickness of the p-type region.