| 摘要 |
An object of the present invention is to provide with a method for manufacturing a semiconductor circuit by which a TFT including particles having a different threshold value is prevented from being operated even if such a TFT is locally formed.According to the present invention, after forming an amorphous silicon layer on a glass substrate, heat treatment and the like is performed to convert the amorphous silicon layer into a polycrystalline silicon layer. At this time, a particle having an abnormal grain diameter is generated in a polycrystalline silicon layer under the influence of foreign particles in a glass substrate, and a TFT having a different threshold value may be possibly formed. In this case, when the particle having an abnormal grain diameter is irradiated with a laser beam to be turned into a granule and a high resistance is given therearound, the TFT having a different threshold value is prevented from being operated, and a leak current does not flow during the off state of the original TFT, thereby improving the display characteristic.
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