| 摘要 |
A dual spin-valve magnetoresistive thin film elements includes a composite free magnetic layer having first and second free magnetic layers, first and second nonmagnetic electrically conductive layers residing below and above the composite free magnetic layer, respectively, first and second dual pinned magnetic layers each having first and second pinned magnetic layers, and first and second antiferromagnetic layers. In the first dual pinned magnetic layer, the first pinned magnetic layer of contacts the first antiferromagnetic layer and the second pinned magnetic layer contacts the first nonmagnetic electrically conductive layer. In the second dual pinned magnetic layer, the first pinned magnetic layer of contacts the second antiferromagnetic layer and the second pinned magnetic layer contacts the second nonmagnetic electrically conductive layer, and the magnetic moment of the first pinned magnetic layer is smaller than the second pinned magnetic layer. The magnetization of the first and second free magnetic layers face in opposite directions.
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