| 摘要 |
A semiconductor device manufactured by cleaning without dissolving W, Ti, or TiN even if these metallic materials are exposed on the substrates to be cleaned, and a method for manufacturing such a semiconductor device. Impurities present on a silicon substrate can be removed while controlling the etching of a tungsten film exposed on the surface of a silicon substrate, by dipping and cleaning the silicon substrate in one or a plurality of chemical solutions selected from a group consisting of HF, HCl, and NH4OH, under the condition that the surface of the silicon substrate is entirely covered with a tungsten film. After dry etching for patterning the tungsten film and the barrier metal, impurities present on a silicon substrate can be removed while controlling the etching of the tungsten film and the barrier metal exposed on the surface of a silicon substrate, by dipping and cleaning the silicon substrate in one or a plurality of chemical solutions selected from a group consisting of HCl and NH4OH.
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