发明名称 |
Contact structure and method of forming a contact structure |
摘要 |
Contact structures, methods for forming contact structures, and masks for forming contact structures are disclosed. According to one embodiment a contact hole (208) may be formed with a contact hole mask (106/106') that may have a generally rectangular shape and include corner extensions (108-0 to 108-3) and side indents (110-0 to 110-3). A long side of a contact hole (208) may be aligned in the same direction as an active area (204). A contact hole (208) may be situated between a first portion (206-0) and a second portion (206-1) of an intermediate structure (206). Alternate embodiments can include a "cactus" shaped intermediate structure (406) that may be formed with an intermediate structure mask having corner indents (308).
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申请公布号 |
US6596466(B1) |
申请公布日期 |
2003.07.22 |
申请号 |
US20000491044 |
申请日期 |
2000.01.25 |
申请人 |
CYPRESS SEMICONDUCTOR CORPORATION |
发明人 |
POHLAND OLIVER;WONG KAICHIU |
分类号 |
G03F1/14;H01L21/033;H01L21/311;H01L21/768;H01L21/8244;H01L27/11;(IPC1-7):G03F9/00;G03F7/36;G03F7/20 |
主分类号 |
G03F1/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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