发明名称 Contact structure and method of forming a contact structure
摘要 Contact structures, methods for forming contact structures, and masks for forming contact structures are disclosed. According to one embodiment a contact hole (208) may be formed with a contact hole mask (106/106') that may have a generally rectangular shape and include corner extensions (108-0 to 108-3) and side indents (110-0 to 110-3). A long side of a contact hole (208) may be aligned in the same direction as an active area (204). A contact hole (208) may be situated between a first portion (206-0) and a second portion (206-1) of an intermediate structure (206). Alternate embodiments can include a "cactus" shaped intermediate structure (406) that may be formed with an intermediate structure mask having corner indents (308).
申请公布号 US6596466(B1) 申请公布日期 2003.07.22
申请号 US20000491044 申请日期 2000.01.25
申请人 CYPRESS SEMICONDUCTOR CORPORATION 发明人 POHLAND OLIVER;WONG KAICHIU
分类号 G03F1/14;H01L21/033;H01L21/311;H01L21/768;H01L21/8244;H01L27/11;(IPC1-7):G03F9/00;G03F7/36;G03F7/20 主分类号 G03F1/14
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