发明名称 METHOD AND APPARATUS FOR GROWING GROUP III NITRIDE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To produce a large area and high quality group III nitride crystal. SOLUTION: Terminals 21, 22 are arranged at the tip end of a sensor 20 in a spatially separated state. The height of a liquid surface (gas-liquid interface) is kept constant by stopping or moving upward the bottom plate 17 of a crystal growth vessel 18 by the presence or absence of the electrical continuity between the terminals 21, 22 arranged at the tip end of the sensor 20. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003206198(A) 申请公布日期 2003.07.22
申请号 JP20020003312 申请日期 2002.01.10
申请人 RICOH CO LTD 发明人 IWATA HIROKAZU;SARAYAMA SHOJI
分类号 C30B29/38;C30B11/12;(IPC1-7):C30B29/38 主分类号 C30B29/38
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