发明名称 Memory read circuitry
摘要 A circuit on a semiconductor for precharging a local bitline and a global bitline. The circuit includes: a precharge input; a first switch, the gate of the first switch coupled to the precharge input, the source of the first switch coupled to a voltage source, the drain of the first switch coupled to the local bitline; a delay element, the input of the delay element coupled to the precharge input; and a second switch, the gate of the second switch coupled to the output of the delay element, the source of the second switch coupled to the voltage source, the drain of the second switch coupled to the global bitline.
申请公布号 US6597611(B2) 申请公布日期 2003.07.22
申请号 US20020295953 申请日期 2002.11.15
申请人 SUN MICROSYSTEMS, INC. 发明人 DESAI SHAISHAV A.;TAWARI DEVENDRA N.
分类号 G11C7/12;(IPC1-7):G11C7/00;G11C7/02;G11C8/00 主分类号 G11C7/12
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