Method and apparatus for processing semiconductor substrates with hydroxyl radicals

摘要

A method for processing semiconductor substrates by reacting hydroxyl radicals with a precursor to cause the precursor to decompose and form a film which deposits on a substrate. Hydroxyl radicals, which are produced in a hydroxyl-ion producing apparatus outside of a chemical vapor deposition reactor, are mixed with a precursor to form a hydroxyl ions-precursor mixture. The hydroxyl ions-precursor mixture is introduced into the chemical vapor deposition reactor.