Resistive cross point memory arrays having a charge injection differential sense amplifier

摘要

A data storage device that includes a resistive cross point array of memory cells, a plurality of word lines, and a plurality of bit lines, and a sense amplifier that utilizes an injection charge amplifier is disclosed. The memory cells are arranged into multiple groups of one or more memory cells. The injection charge amplifier determines whether a sensed memory cell is in a first or second resistive state as compared to a reference cell.