| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that a dopant in a junction part diffuses through thermal treatment when a film of a titanium silicide is formed, thereby a contact resistance increases due to the concentration reduction of the dopant existing in the junction part. SOLUTION: A contact hole is formed so as to expose the conjunction part 21 by etching a dielectric film 22, a dielectric film 23 of spacer is formed on the sidewall of the contact hole, and then a dopant which is same as the dopant of the lower conjunction layer, including the conjunction part, is added to the surface of a bit-line contact. COPYRIGHT: (C)2003,JPO
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