| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of semiconductors that can improve the uniformity of B concentration in B doping of an epitaxial growth film or the like of a Si film or a SiGe film, using a vertical or a horizontal type reduced pressure CVD system. SOLUTION: The manufacturing method of the semiconductors that performs film deposition by a chemical vapor deposition method, while retaining a substrate (6) in a stacked state by a boat (5) at predetermined intervals within a reaction tube (1), wherein gas feeding portions, such as a source gas nozzle (3), doping gas nozzles (1) to (4) (3a to 3b) or the like are disposed at a plurality of places in a direction of the stacked substrates (6), a Si-based gas or the Si-based gas and BCl<SB>3</SB>gas is or are fed from an outermost upstream side, and the BCl<SB>3</SB>gas is fed from other gas feed portions. COPYRIGHT: (C)2003,JPO
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