发明名称 |
VACUUM ARC VAPOR DEPOSITION METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a vacuum arc vapor deposition method by which reduction in film-deposition rate can be suppressed and stable film-deposition rate can be attained. SOLUTION: The vacuum arc vapor deposition method comprises steps of: generating cathode-material plasma by means of arc discharge using a film- deposition raw material as a cathode in an arc source; introducing the cathode- material plasma by means of a magnetic filter to a substrate to be subjected to film deposition; and depositing a film from ions of the cathode-material in the cathode-material plasma. In this method, pressure at the film deposition is made to≤0.01 Pa. COPYRIGHT: (C)2003,JPO
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申请公布号 |
JP2003201557(A) |
申请公布日期 |
2003.07.18 |
申请号 |
JP20020000925 |
申请日期 |
2002.01.07 |
申请人 |
FUJI ELECTRIC CO LTD |
发明人 |
NAGATA NORIHISA;MATSUYAMA HIDEAKI;KUSAKAWA KAZUHIRO |
分类号 |
C23C14/24;G11B5/72;G11B5/84;G11B5/85;(IPC1-7):C23C14/24 |
主分类号 |
C23C14/24 |
代理机构 |
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