| 摘要 |
PURPOSE: An image sensor and a method for manufacturing the same are provided to be capable of preventing the decrease of a driving range according to the reduction of the size of a photodiode. CONSTITUTION: An image sensor is provided with a semiconductor layer(22), the first and second gate electrode(25a,25b) located and spaced apart from each other on the semiconductor layer, a photodiode(26) arranged at one edge portion of the first gate electrode in the semiconductor layer, and a floating diffusion region(29) overlaid with the other edge portion of the first gate electrode and spaced apart from one edge portion of the second gate electrode as much as the width overlaid between the floating diffusion region and the first gate electrode.
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