| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for mask ROM which can apply a dual-gate process and a silicide process used, in a logic process, to flat cell type mask ROM. <P>SOLUTION: The manufacturing method for mask ROM includes a process of providing a substrate 200 where a memory cell array area and a peripheral area are defined, a process of forming an element isolation film 202, a process of forming a substance layer over the entire surface of the substrate 200, a process of forming a 1st gate 226 by etching a specified part of the substance layer in the peripheral region, a process of forming an insulation spacer 238 on the flank of the gate 226, a process of forming a source/drain 240 in the peripheral region, a process of forming silicide 242 on the substance layer in the memory cell array region and the gate 226 and source/drain 240 in the peripheral region, a process of forming a 2nd gate 226 by etching a specified part of the substance layer in the memory cell array region, and a process of forming a protection film 244 on the resulting structure. <P>COPYRIGHT: (C)2003,JPO |
