SENSOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR THIN FILM GAS SENSOR FOR DETECTING AMMONIA GAS

摘要

PURPOSE: A sensor device and a method for fabricating a semiconductor thin film gas sensor are provided to achieve sensor device having superior sensibility for ammonia gas and rapid recovery property by adding Pt to a WO3 in the form of a thin film. CONSTITUTION: An n-type oxide semiconductor layer is formed on an insulation substrate(17) through a dual ion beam sputtering process. A Pt layer(21), which is catalyst, is formed on the n-type oxide semiconductor layer through an electronic beam evaporation process while precisely controlling thickness of the Pt layer(21). Then, a heat treatment process is carried out in an electric furnace at the temperature about 400 to 80 deg.C for 2-4 hours. The n-type oxide semiconductor layer is a WO3 layer(20) having thickness about 50 to 200nm. The Pt layer(21) has thickness about 0.5 to 2nm.