| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging device capable of reducing imaging defect (white spots) and suppressing rises in depletion voltage and shutter voltage, and to provide a method for manufacturing the same. SOLUTION: The solid state imaging device comprises a photoelectric converting unit 60 disposed near a surface of a semiconductor substrate 31 and having an n-type impurity diffused layer 33 for photoelectric converting, a p-type impurity diffused layer disposed on a surface of the unit 60, and a charge transfer unit 61 made of an n-type impurity diffused layer 35 for transferring a signal charge so that the p-type impurity diffused layer has a central p-type high concentration region 34a having a higher impurity concentration than that of the p-type low concentration region 34b and the p-type low concentration region 34b of a periphery. COPYRIGHT: (C)2003,JPO
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