| 摘要 |
PURPOSE: A method for fabricating a quasi phase matched second harmonic generator is provided to fabricate a second harmonic generator having an ideal domain switching region. CONSTITUTION: A Ti thin film is formed on a substrate(100), and a photoresist mask is formed on the Ti thin film using photolithography. Exposed portions of the Ti thin film, which are not covered with the photoresist mask, are selectively etched, to form Ti thin film patterns. A MgO layer is formed on the overall surface of the substrate. The photoresist mask is removed using a lift-off method to leave MgO layer patterns between adjacent Ti thin film patterns. The Ti thin film and the MgO layer are simultaneously diffused to the substrate, to form domain switching regions(110) and non-switching regions(120).
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