| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor and a method of manufacturing thereof, in such a manner that multi gates can be realized without increasing the size. SOLUTION: The thin film transistor includes a semiconductor layer of zigzag shape, which is formed on a insulating substrate and a gate pole providing at least one slot which intersects the semiconductor layer. The semiconductor layer includes at least two or more body members, intersecting the gate pole and at least one or more connection members making the adjacent body members connected with each other. The portion overlapped with the semiconductor layer in the gate pole acts as multigates and has a MILC face on the portion which is not intersected with the gate pole in the semiconductor layer. COPYRIGHT: (C)2003,JPO |
