MASK USED FOR FORMING PATTERN AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A mask used for forming a pattern and a manufacturing method thereof are provided to be capable of reliably forming the pattern on a semiconductor substrate. CONSTITUTION: A mask used for forming a pattern is provided with a transparent substrate(30), a phase shifter(32) formed on the transparent substrate for shifting the phase of transmitting light, and a light transmissivity control part(36) formed on the phase shifter. At this time, the light transmissivity control part is capable of making the first light transmissivity of the first mask region corresponding to the first wafer region smaller than the second light transmissivity of the second mask region corresponding to the second wafer region. At the time, the step of the first wafer region is larger than that of the second wafer region. Preferably, the light transmissivity control part is a light transmissivity control layer formed at the first mask region alone.