| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an exposure method and an aligner wherein exposure can be made with high resolution but without exchanging a mask pattern having a fine width (e.g. smaller than 0.15μm), with the pattern being a mixture pattern ranging from various patterns, isolated and complicated patterns including L and S patterns. <P>SOLUTION: In a light exposure method where a pattern on a mask is exposed onto a surface to be exposed through a projecting lens, use is made of a phase pattern, composed of superimposed fine period patterns in a desired pattern region and in the vicinity of the same with its transmissivity comprising a multi-valued transmissivity of three or larger, and the mask is multiply illuminated with an effective light source, corresponding to smallσillumination and largeσillumination. <P>COPYRIGHT: (C)2003,JPO</p> |
