| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To make a nonvolatile semiconductor memory minute and to make power source voltage low by reducing a peak current required for write-in to reduce current capacity and boosting capability, and to shorten a write time by increasing generation efficiency of hot electrons. <P>SOLUTION: In the nonvolatile semiconductor memory having a control gate and a floating gate, and provided with a memory element storing data by injecting electrons in the floating gate and discharging electrons from the floating gate, the memory is provided with a current detecting circuit detecting a drain current supplied to a drain of the memory element and a voltage control circuit controlling gate voltage supplied to a control gate of the memory element conforming to the drain current detected by the current detecting circuit. <P>COPYRIGHT: (C)2003,JPO</p> |
