| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing a semiconductor device which reduces the number of times of mask process, when a contact hole is formed. SOLUTION: The semiconductor device is provided with a substrate 1, gate structure 9, stopper film 11, interlayer insulating film 12, contact hole 17 reaching the substrate 1 from an upper surface 13 of the film 12, material 18 embedded in the contact hole 17, first metal wiring layer 19, interlayer insulating film 20, contact hole 23 reaching the layer 19 from an upper surface 21 of the film 20, and contact hole 24 reaching a gate electrode 7 of the gate structure 9 from an upper surface 21 of the film 20. The contact hole 24 is formed by the same process as the formation process of the contact hole 23. COPYRIGHT: (C)2003,JPO
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