发明名称 MEMORY DEVICE, ITS CONTROL METHOD, AND MEMORY SUB-SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a memory device in which a chip selecting signal is not enabled and which can perform operation which does not affect the outside, its control method, and a memory sub-system. SOLUTION: This device is provided with a chip selecting determiner (22) for deciding whether the chip selecting signals are enabled, a main operation command table (26) for defining first operation corresponding to a control signal (COMMAND) when the chip selecting signals (CS) are enabled, a preliminary operation command table (27) for defining second operation corresponding to the control signal (COMMAND) when the chip selecting signals are disabled, and a logic circuit unit (24) for decoding the control signals into a signal corresponding to the first or the second operation based on the main operation command table (26) or the preliminary operation command table (27) in accordance with enable conditions of the chip selecting signals from the selecting determiner. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003203477(A) 申请公布日期 2003.07.18
申请号 JP20020338254 申请日期 2002.11.21
申请人 HYNIX SEMICONDUCTOR INC 发明人 YOON HA RYONG
分类号 G06F12/06;G06F12/00;G06F12/02;G06F13/42;G11C7/10;G11C11/401;G11C11/407;G11C11/4076;(IPC1-7):G11C11/401 主分类号 G06F12/06
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