| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a ferroelectric nonvolatile semiconductor memory having high reliability. SOLUTION: The ferroelectric nonvolatile semiconductor memory comprises bit lines BLA, selecting transistors TRA, a memory unit MUA having M pieces of memory cells MCAM, M pieces of plate lines PL so that the memory unit MUA is formed above a semiconductor substrate 10 via an insulation layer 17 and covered with an insulation film 27A, each memory cell has a common first electrode 21, a capacitor layer 22 and a second electrode 23. A common first electrode CNA is connected to the bit line BLA via the transistor TRA. The method for manufacturing the ferroelectric nonvolatile semiconductor memory comprises the step of forming a connecting hole 19 for connecting the common first electrode CNA to the transistor TRA through the insulation film 27A and the insulation layer 17. COPYRIGHT: (C)2003,JPO
|
