| 摘要 |
PROBLEM TO BE SOLVED: To stabilize the characteristics of a zap diode of a semiconductor device in which the zap diode is formed on a semiconductor substrate on which another semiconductor element is also formed through an insulating film after zapping. SOLUTION: The zap diode composed of N<SP>+</SP>-type cathode regions 33 and 35 and a P<SP>+</SP>-type anode region 34 is formed on the semiconductor substrate on which another semiconductor element is also formed through the insulating film 32. Then an interlayer insulating film 36 is formed on the zap diode and a metallic film 39 is formed on the insulating film 36. Since the metallic film 30 covers the P-N junction of the zap diode, the zap diode is short-circuited to the metallic film 39 provided on the P-N junction and becomes a resistor when a puncture or destruction occurs due to an impressed reverse bias voltage higher than a breakdown voltage. COPYRIGHT: (C)2003,JPO
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