发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SHUNT RESISTOR
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a shunt resistor which has a compact structure, detecting large current with high accuracy and having high heat radiation. SOLUTION: In the semiconductor device with the built-in shunt resistor detecting the current which flows to a semiconductor element 12 attached to an insulating circuit board 5 on a heat radiation plate 6, the shunt resistor 4 is provided with a U-shaped metal plate 2 connecting a straight line part to the insulating circuit board 5, and an insulating material 1 jointed between a pair of the straight line parts of the metal plate with a jointing material. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003203805(A) 申请公布日期 2003.07.18
申请号 JP20020273142 申请日期 2002.09.19
申请人 MITSUBISHI ELECTRIC CORP 发明人 KIMURA SUSUMU;KASHIBA YOSHIHIRO;KIMOTO NOBUYOSHI;FUKADA MASAKAZU;YOSHIDA TAKANOBU
分类号 H01C3/14;H01C13/00;H01L25/07;H01L25/18;(IPC1-7):H01C13/00 主分类号 H01C3/14
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