| 摘要 |
PROBLEM TO BE SOLVED: To improve nonuniformity of the grain diameter of polycrystalline silicon, resulting from unevenness of thickness of an amorphous silicon film in the crystallization process, to reform the amorphous silicon into the polycrystalline silicon through irradiation of an energy beam. SOLUTION: At irradiation of an amorphous silicon thin film, formed on an insulated substrate 11, with a laser beam generated from a laser beam generator 33, the film thickness of the amorphous silicon thin film previously measured for each of a plurality of blocks is stored to a storage device 35. The energy beam is irradiated through adjustment to the optimum energy density in block units, in order to obtain the polycrystalline silicon thin film of the desired grain diameter, based on this measured value. COPYRIGHT: (C)2003,JPO
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