| 摘要 |
<P>PROBLEM TO BE SOLVED: To secure transfer and processing margins without complicatedly deforming a gate shape, when gate wires of a semiconductor storage device are formed. <P>SOLUTION: This semiconductor storage device comprises a memory call array, constituted by arranging memory cells equipped with two groups of driver transistors, load transistors, and access transistors on a semiconductor substrate in two dimensions, a plurality of word lines which are arranged in parallel with a 1st direction, a plurality of bit lines which are arranged in parallel with a 2nd direction orthogonal to the 1st direction, a 1st rectangular wire which connects the 1st group of driver transistors and load transistors and has a straight side, a 2nd rectangular gate wire which is connected to the access transistors and has a straight side, a 1st LIC which connects the 1st gate wire and 2nd group of driver transistors and load transistors, and a 2nd LIC which connects the 2nd gate wire and word lines. <P>COPYRIGHT: (C)2003,JPO |
