METHOD FOR DOPING SEMICONDUCTOR LAYER, METHOD FOR PRODUCING THIN FILM SEMICONDUCTOR ELEMENT AND THIN FILM SEMICONDUCTOR ELEMENT

摘要

A low concentration impurity diffusion region is formed with good controllability even in case of using a low heat resistant substrate. When doping a semiconductor layer, after forming the semiconductor layer on the substrate, the amount of the dopant ion adsorbed on a surface of the semiconductor layer is controlled by introducing hydrogen gas at the time of plasma irradiation and activating the adsorbed dopant ion in the semiconductor layer by an excimer laser.