| 摘要 |
PROBLEM TO BE SOLVED: To reduce the gate-collector capacity of a trench gate type semiconductor device without compromising the carrier storing effect and, in addition, to raise the collector-emitter reverse blocking voltage of the device. SOLUTION: In the semiconductor device having a trench gate structure, channel regions and carrier storing regions 22 are selectively formed in the surface layer of a drift layer and the regions are separated from each other by trenches 23 and 24. Notches 27 are partially provided in the trenches 23 and 24 so that the notches 27 may not become through holes and the carrier storing regions 22 are electrically connected to an emitter electrode through the notches 27. COPYRIGHT: (C)2003,JPO
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