| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which a test can be performed with a low frequency and a test can be performed accurately in a short time, even if an operation clock signal of high frequency is inputted. SOLUTION: The device comprises a state control means 10 receiving an external control signal/CS or the like and outputting an operation instruction CACT or the like, a burst length control means 30 receiving the operation instruction CACT and outputting a burst control signal YBST, a clock buffer means 20 outputting a pulse clock signal CLKP and an inverse clock signal CLKB, a burst control signal generating means 60 outputting a test mode burst control signal YBSTM having an inverse burst signal /YBST and a short pulse, a burst finish control means 40 outputting a burst finish signal TBSTEND indicating a burst finish point of time, and a pre-charge control means 50 performing pre-charge operation in response to the burst finish signal YBSTEND. COPYRIGHT: (C)2003,JPO
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